GaN-based UV Photodiode - GT-ABC-L
? Broad band UVA+UVB+UVC photodiode
? Photovoltaic mode operation
? TO-46 metal housing
? Good visible blindness
? High responsivity and low dark current
- Model Number: GT-ABC-L
- Data Sheet:
- Quantity:
- - +
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Product Specification
GT-ABC-L?GaN-based UV Photodiode?General Features:
??Broad band UVA+UVB+UVC photodiode
??Photovoltaic mode operation
??TO-46 metal housing
??Good visible blindness
??High responsivity and low dark current
GT-ABC-L?GaN-based UV Photodiode?Applications:?
UV index monitoring, UV radiation dose measurement, flame detection
GT-ABC-L?GaN-based UV Photodiode?Specifications:
|
Parameters |
Symbol |
Value |
Unit |
|
Maximum ratings |
|
||
|
Operation temperature range |
Topt |
-25 - 85 |
°C |
|
Storage temperature range |
Tsto |
-40 - 85 |
°C |
|
Soldering temperature (3 s) |
Tsol |
260 |
°C |
|
Reverse voltage |
Vr-max |
-10? |
V |
|
General characteristics (25°C) |
|
||
|
Chip size |
A |
1 |
mm2 |
|
Dark current (Vr?= -5 V) |
Id |
<1 |
nA |
|
Temperature coefficient |
Tc |
-0.02 |
%/°C |
|
Capacitance (at 0 V and 1 MHz) |
Cp | 18 |
pF |
|
Spectral response characteristics (25°C) |
|
||
|
Wavelength of peak responsivisity |
λp |
355 |
nm |
|
Peak responsivisity (at 275 nm) |
Rmax |
0.20 |
A/W |
|
Spectral response range (R=0.1×Rmax) |
- |
300-370 |
nm |
|
UV-visible rejection ratio (Rmax/R400 nm) |
- | >104 | - |
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